| 摘要 |
<p>PURPOSE: To reduce parasitic resistance by widening a cross-sectional area by rag a distributed constant line thicker than the line width of a line formed in spiral shape which forms prescribed inductance used for the drain voltage supply of a pre-FET. CONSTITUTION: Connection between the drain electrode of the pre-FET 6 and a pad 16 for drain voltage supply comprises a spiral inductance of line & space 16μm provided for inter-stage matching and the distributed constant line 25 of line width 25μm. The distributed constant line 11 is provided with the line width 72μm thicker than that of a line 21, and line length is set at a small value in which the output impedance of a FET 10 shows 1Ω. Therefore, the ratio of impedance observing a power source from the drain electrode for the output impedance of the output FET goes to around 100 even when the line length is set at around 1.5mm that is nearly 1/5 of around 11mm equivalent toλ/4, which negligibly reduces the leakage of an output signal to the power source. In this way, the line can be pushed in the same substrate only by meandering.</p> |
