| 摘要 |
The photo-diode is prepared by (A) forming a photoresist pattern on a glass substrate deposited with a chromium, an amorphous SiH and a transparent electrode films by turns, (B) first etching the a-SiH film by RIE etching according to the pattern, which is formed by dry-etching the transparent electrode film with BCl2 or CH4 gas added with H2 or O2, and (C) second etching the chromium film of the lower electrode of the photo-diode by RIE method with Cl2 gas. There's no remained photoresist because this method does not have photoresistor removing process, so there's no need of cleaning process for remained photoresist.
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