发明名称 METHOD AND APPARATUS FOR ANALYZING SURFACE
摘要 PURPOSE: To measure the element composition and bonding state of the uppermost layer at the surface of a solid with high sensitivity without damaging a ground, by separating multivalent ions to a predetermined number of valencies, decelerating the ions to a speed not higher than a sputtering threshold value of a material to be measured and emitting the ions to the solid sample. CONSTITUTION: When the multivalent ions are emitted after the kinetic energy thereof is sufficiently decelerated to not larger than a physical sputtering threshold value (generally not smaller than 20eV) of a solid, the ions do not invade the interior of the solid and particles (atomic ions) are emitted with a higher probability from the uppermost layer of the surface. Electron beams 107 are emitted to an Ar gas 106 at a multivalent ion-generating part 108, and multivalent ions 105 are taken out from the generated Ar gas 106 by a Wien filter 109. The kinetic energy of the ions is decelerated to not larger than 20eV by an ion decelerator 110 and emitted to an Si (100) substrate 101a. The distribution of the kinetic energy emitted from the surface is analyzed at 112. In this manner, the element composition and bonding state of the sample surface can be measured with high sensitivity while damages are reduced.
申请公布号 JPH08166362(A) 申请公布日期 1996.06.25
申请号 JP19950092197 申请日期 1995.04.18
申请人 HITACHI LTD 发明人 ITABASHI NAOSHI;SHICHI HIROYASU;MOCHIJI KOZO;YAMAMOTO SEIJI;OSABE SATOSHI;KANEBORI KEIICHI
分类号 G01N23/225 主分类号 G01N23/225
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