MOSFET AND THE MANUFACTURING METHOD THEREOF

摘要

forming a gate oxide layer (2) and a gate electrode (3) over a semiconductor substrate (1) and forming a LDD region (5) by ion-implantation of the low density impurity of the reverse type to that of the substrate; forming an oxide layer (11) over the gate electrode (3); depositing a polysilicon (12) over the whole face of the wafer and the ion-implantation of the reverse type impurity to that of the LDD region into the polysilicon (12); forming a polysilicon spacer (12') by etching the polysilicon (12) anisotropically; forming a narrow junction by diffusing the impurity of the polysilicon (12) to the LDD region (5) by annealing; forming a source/drain region (8) by ion-implantation of the high density impurity of the same type as the LDD region into the semiconductor substrate.