FORMATION OF SILICON FILM AND SILICON FILM FORMING DEVICE

摘要

PURPOSE: To deposit a silicon film at a high rate with high raw material utilization efficiency at a low cost by spraying and decomposing a liq. compd. contg. silicon and chlorine on a heated substrate in the form of a fine particle. CONSTITUTION: A compd. 55 contg. silicon and chlorine and which is liq. under barometric pressure and normal temps. is introduced into an atomizer 18 through a liq. flow controller 52, and a carrier gas and/or a reducing gas are introduced into the atomizer 18 through a flow controller 50. The mixture is introduced into the space 14 of a reaction chamber 12 from a nozzle and sprayed over the whole surface of a substrate 26 held by a holder 16 as the fine liq. particle. The space 14 in the chamber 12 is preferably kept at several ten Torr to one atm. The substrate 26 is heated to 450 to 800 deg.C by a heater 28 provided to the holder 16, hence the fine-particle compd. close to the substrate surface is decomposed, and a silicon film 60 is deposited and formed on the substrate.