SILICON FIELD EMISSION EMITTER AND THE MANUFACTURING METHOD

摘要

a silicon substrate (31) where the high density impurity is diffused; an emitter (37) projected in the form of a cone connected to a substrate (31); an insulating layer (32,33,34) which is open closely to the emitter and formed on the top of the substrate; a gate electrode (39) which is formed to surround the edge of the opened insulating layer; a metal silicide (40) which is formed to intensify the characteristics of the emitter on top of the emitter.