FIELD EMISSION DEVICE AND THE MANUFACTURING METHOD

摘要

The method is provided to increase the combining force between the emitter and the substrate without reducing the emission efficiency and to prevent the diffusion of emitter metal to the insulating layer during thermal process, and comprises the steps of: forming an insulating layer (13) by thermal oxidation of the silicon substrate (11); forming a resist pattern (P.R) opened into top of the insulating layer (13); forming an opening (17) of the insulating layer by anisotropic etching; forming an gate electrode (15) by depositing a metal; forming a protecting layer (18') and an adhered layer (18) simultaneously; forming the upper part of the emitter; lift-off processing of the protecting layer (18) and its upper layers.