| 摘要 |
PURPOSE: To completely remove a silane gas in a waste gas from a semiconductor device by using a processing agent mainly containing one or more kinds of one of solid metallic hydroxides and solid metallic basic carbonates or solid metallic carbonates. CONSTITUTION: The solid metallic carbonates or solid metallic basic carbonates to be used are, for example, carbonates or basic carbonates of metals of at least one or more kinds selected from Cu, Zn, Mn, Fe, Co or Ni and the metallic hydroxides are constituted of the same metallic kinds including Al. In the case of the practical treating operation, these metallic hydroxides or carbonates are packed into a packed bed and the waste gas containing the silane based gas is passed through the packed layer and treated preferably while heating the packed layer. In this case, the processing agent is fine and has preferably >=0.1m<2> /g surface area to improve gas phase contact ability with the silane gas. As a result, the silane gas discharged from the semiconductor device is made harmless. |
