| 摘要 |
<p>PURPOSE: To provide a flash memory device causing no lowering in an access speed of address retrieval and no revision of software when the data are rewritten from a self system flash memory to another system flash memory by writing in the same address space. CONSTITUTION: When a defect occurs in a sector 00 of a zero system flash memory 1, a self system flash memory storage part 31 sends a self system flash memory communication signal 34 to an access flash memory switch control part 33. The self flash memory in the sector 00 informs that the zero system flash memory 1 is switched to a one system flash memory 2. The receiving switch control part 33 writes the data of the sector 00 of the zero system flash memory 1 in the sector 00 of the one system flash memory 2 to cause it to retreat. In such a manner, by selecting and switching the self system flash memory accessing at every erase unit, only the sector rewriting the data is rewritten to another system memory, and no rewrite speed is lowered.</p> |
