MASK AND ITS FORMATION AND CHARGED PARTICLE BEAM EXPOSURE METHOD

摘要

PURPOSE: To prevent the throughput of an exposure device from being lowered and to completely and easily correct a proximity effect. CONSTITUTION: A pattern similar to a desired transfer pattern is divided into the 1st rectangles 45 of the same size. The 2nd rectangle of the same size is formed in each 1st rectangle 45, and the amount of the proximity effect from the 2nd rectangle itself and the rectangles surrounding it is obtained for the 2nd rectangle. The size of the 2nd rectangle is corrected in accordance with the obtained amount so as to obtain the 3rd rectangle 56, then the 3rd rectangle 56 is set as a transmission hole. The correction is performed by making the sum of the direct exposure to a resist by an electron beam passing through the 2nd rectangle and the exposure added to the direct exposure based on the scattering in the resist of the electron beam passing through the 2nd rectangle itself and the 2nd rectangles surrounding it nearly the same for the 2nd rectangle and making the maximum size of the 3rd rectangle 56 equal to the 2nd rectangle.