LASER ANNEALING METHOD AND LIQUID CRYSTAL DISPLAY DEVICE

摘要

PURPOSE: To suppress the variance in element capability between driving TFT in a scanning side and driving TFT in a signal side and to prevent the occurrence of image nonuniformity and reduction in image quality by irradiating a semiconductor thin film for forming driving TFT of screen TFT with the edge portion of a pulse laser beam in a thin film transistor(TFT) manufacturing method by means of laser annealing. CONSTITUTION: An amorphous silicon thin film is used for a semiconductor layer 19 before laser crystallization and for a laser a XeCl excimer laser as a pulse laser is used. A laser beam is formed oblong having a width W1 in a horizontal direction and the semiconductor layer 19 is continuously irradiated with this by a shifting amount of X1 in the horizontal direction. Assuming that the width of the semiconductor layer 19 is Y1 in its shifting direction during this time, laser annealing is performed under 2.X1=Y1. Therefore, the semiconductor layer 19 is always irradiated with a beam edge, preventing image nonuniformity.