| 摘要 |
The method of manufacturing hetero junction bipolar transistor comprises the steps of : growing epitaxial layers(2,3) on a GaAs substrate(1); patterning after depositing a SiO2 layer(4); etching after isolation implantation of the epitaxial layers with H+ or B+; growing a p+`-GaAs layer(5) on the implantation layer by the first MOCVD process; growing a base and an emitter layer by the second MOCVD process after removing the SiO2 layer(4); and depositing a base electrode(B) on the p+`-GaAs layer(5) and depositing a collector electrode(C) on the epitaxial layer by etching to expose the p+`-GaAs layer(5) after depositing an emitter electrode(E) on the emitter layer.
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