发明名称 SPUTTERING TARGET AND ITS PRODUCTION
摘要 <p>PURPOSE: To produce a sputtering target capable of making a carbon content in a film constant by mixing a chromium nitride powder specified in nitrogen content, chromium carbide powder and metallic chromium powder and sintering the mixture by a hot hydrostatic pressing. CONSTITUTION: The chromium nitride powder having 1-12wt.% nitrogen content, the chromium carbide powder and the metallic chromium powder are mixed. This powdery mixture is compacted in a desired size by a die press forming or a cold isotropic pressure working. This compact is sintered by the hot hydrostatic pressing method. A sintering temp. is preferably 1100-1350 deg.C. In this way, a sintered compact having compsn. contg. substantially 0.1-5wt.% carbon and 1-10wt.% nitrogen is obtained. This sintered compact is machined to make the sputtering target. A chromium carbide nitride antireflection film for a photomask which is constant in nitrogen concn. and carbon concn. and hardly causing defect in the film is obtd. by using this target.</p>
申请公布号 JPH08225933(A) 申请公布日期 1996.09.03
申请号 JP19950032122 申请日期 1995.02.21
申请人 TOSOH CORP 发明人 TAKAHARA TOSHIYA;KONDO AKIO
分类号 C23C14/06;C23C14/34;G03F1/54;H01L21/203;(IPC1-7):C23C14/34;G03F1/08 主分类号 C23C14/06
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