| 摘要 |
<p>A method of forming a titanium nitride film onto a semiconductor substrate (11) includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate (11) heated to a temperature of 400 °C to about 500 °C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.</p> |
