发明名称 SURFACE ANALYZING METHOD FOR SEMICONDUCTOR SUBSTRATE AND DEVICE THEREOF
摘要 PURPOSE: To provide a surface analyzing method for a semiconductor substrate and its device having efficient workability and capable of indicating the proper cleanliness of the surface of the silicone semiconductor substrate with the analyzed value. CONSTITUTION: A semiconductor substrate 1 is mounted, then a droplet holding container 11 provided with a through hole having a prescribed shape is fitted on the semiconductor substrate 1. An evaluation solution is dripped into the through hole of the droplet holding container 11, and the evaluation solution is held in the through hole of the container 11. The semiconductor substrate 1 is shielded from the outside atmosphere, and the dripped evaluation solution is analyzed after it is condensed. A cover member 6 provided with a through hole 7 having a prescribed shape is arranged on the semiconductor substrate 1 in no contact with the substrate face. The droplet holding container 11 provided with the through hole is fitted to the through hole 7, and the evaluation solution is dripped into the through hole of the droplet holding container 11. The evaluation solution is held in the through hole of the container 11, the semiconductor substrate 1 is shielded from the outside atmosphere, and the condensed evaluation solution is analyzed.
申请公布号 JPH08271389(A) 申请公布日期 1996.10.18
申请号 JP19950072701 申请日期 1995.03.30
申请人 SUMITOMO SITIX CORP 发明人 TOKUSHIMA KAORI
分类号 G01N23/223;G01N1/28 主分类号 G01N23/223
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