| 摘要 |
<p>PURPOSE: To provide a ferroelectric memory which can be manufactured to a high degree of integration at a low cost and make nondestructive read feasible and a method of driving it and also a method of manufacturing it. CONSTITUTION: A pulse signal sending circuit is constituted of pulse signal sending circuits 11-13 for sending predetermined pulse signals 8-10 and a changeover switch 14. A memory cell 1 is disposed in a simple matrix form in which a ferroelectric thin-film 4 is held between a first and a second stripe electrodes 19, 20 which are opposed to each other and perpendicularly cross to each other. A ferroelectric cell matrix circuit 32 is constituted of terminal resistive element control circuits 35a, 35b provided with a terminal resistive element 34, memory cell selection circuits 15a, 15b and the ferroelectric cell matrix circuit 32. A ferroelectric memory is constituted of a differential reference cell 36 and a reading part 33 comprising a comparison amplifier and a signal processing circuit 37, and a predetermined pulse is applied to a selected memory cell to constitute two memory states, thereby performing nondestructive reading.</p> |
