发明名称 |
LOW TEMPERATURE ION-BEAM ASSISTED DEPOSITION METHOD FOR REALIZING SIGE/SI HETEROSTRUCTURES |
摘要 |
A low temperature ion-beam assisted deposition process, comprising the steps of cleaning at least one substrate, subjecting the substrate to a vacuum of at least 2x10-4 Torr, heating the substrate to a temperature of at least 280.degree.C, and directing an ion beam at the substrate, wherein the ion beam comprises ion-associated gas molecules of Si or Ge, so as to grow a thin epitaxial film of Si or Ge on the substrate. |
申请公布号 |
CA2147198(A1) |
申请公布日期 |
1996.10.19 |
申请号 |
CA19952147198 |
申请日期 |
1995.04.18 |
申请人 |
UNIVERSITY OF WATERLOO (THE) |
发明人 |
SELVAKUMAR, CHETTYPALAYAM R.;MOHAJERZADEH, SHAMSODDIN;BRODIE, DONALD E. |
分类号 |
C23C14/22;C30B23/02;H01L21/203 |
主分类号 |
C23C14/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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