发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE, TRANSFER HEAD OF SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD OF TRANSFERRING SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A method of transferring a semiconductor light emitting device, and which includes positioning a transfer head having a head electrode facing a semiconductor light emitting device having an undoped semiconductor layer, the semiconductor light emitting device arranged on a carrier substrate; moving the head electrode of the transfer head close to the undoped semiconductor layer of the semiconductor light emitting device; applying a voltage to the head electrode to provide an attachment force to the undoped semiconductor layer by an electrostatic force; and picking-up the semiconductor light emitting device and transferring the semiconductor light emitting device to base substrate. |
申请公布号 |
US2016300745(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201514808009 |
申请日期 |
2015.07.24 |
申请人 |
LG Electronics Inc. |
发明人 |
CHANG Younghak;JEON Jina |
分类号 |
H01L21/683;H02N13/00;H01L25/075;H01L33/62;H01L33/24;H01L33/38 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor light emitting device, comprising:
a first conductive electrode; a first conductive semiconductor layer on the first conductive electrode; an activation layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the activation layer and having a protruding portion; an undoped semiconductor layer on a first surface of the second conductive semiconductor layer; and a second conductive electrode extending on a second surface of the second conductive semiconductor layer opposite to the first surface to a side surface of the second conductive semiconductor layer and the undoped semiconductor layer, and protruding from the side surface of the undoped semiconductor layer. |
地址 |
Seoul KR |