| 发明名称 |
HYBRID ANALOG AND DIGITAL MEMORY DEVICE |
| 摘要 |
A memory cell including a floating gate transistor including a floating gate, and an analog sensor element adjacent to the floating gate, where an electrical characteristic of the analog sensor element is affected by an amount of charge on the floating gate. |
| 申请公布号 |
US2016300608(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201514683850 |
申请日期 |
2015.04.10 |
| 申请人 |
HGST Netherlands B.V. |
发明人 |
Galinggana, JR. Roger F.;Gregana James Arnold V.;Li Lloyd Henry I. |
| 分类号 |
G11C11/56 |
主分类号 |
G11C11/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell comprising:
a floating gate transistor comprising a floating gate; and an analog sensor element adjacent to the floating gate, wherein an electrical characteristic of the analog sensor element is affected by an amount of charge on the floating gate. |
| 地址 |
Amsterdam NL |
