MANUFACTURING METHOD FOR THIN FILM TRANSISTOR

摘要

forming an insulator(32) on a silicon substrate(31) to deposit a polysilicon on the insulator(32) to form a polysilicon wire(33) by a photolithography; forming a body polysilicon film(313) by an annealing after a silicon ion implantation after depositing a gate insulator(34) and a polysilicon film; an etchback of the body polysilicon film(313) to inject a threshold voltage(V+)-controlling ion into the etchbacked body polysilicon film(313); forming a LDD junctuion(39) by an ion-implantation after forming a photoresist pattern; and forming a highly doped source/drain junction(311) by the ion-implantation after depositing a photoresist and the photolithography.