| 摘要 |
forming an oxide film(22) after forming an epitaxial layer(21) on a semiconductor substrate; leaving the oxide film(22) on a region where an emitter region is formed; forming a base region(24,24') after a photolithography using a photoresist(23); and removing the oxide film(22) on the emitter region form the emitter region(25) by the photolithography using the photoresist(23'), a thermal process and an ion-implantation.
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