发明名称 VIA HOLE FORMING METHOD AND LASER BEAM IRRADIATING EQUIPMENT
摘要 PURPOSE: To realize a high aspect ratio, and to prevent an insulation layer from being left on the interface of a metallic layer by specifying the irradiation method of the laser beam when the pulse beam is irradiated on an insulation film and laminated substrates, and the via hole is formed through the ultrasonic cleaning after the gas is generated in association with the thermal decomposition of the insulation layer. CONSTITUTION: After an irradiation part of a film substrate is irradiated with one shot of the pulse laser beam of the pulse width of 10&mu;s-30ms, the following irradiation of >=1 shots is made after the temporal interval of >=3ms to form the via hole. The pulse laser beam of the irradiation intensity of <=200ns in pulse width and >=10kw/cm<2> in peak density may be used for the irradiation after the first one shot. It is preferable in any case that the gas to flow away a bloom generated during the irradiation is blown, and the temperature gradient where the metallic surface side of the substrate is hot and the insulation layer side is cold is provided.
申请公布号 JPH08309566(A) 申请公布日期 1996.11.26
申请号 JP19950145687 申请日期 1995.05.19
申请人 NEC CORP;SUMITOMO METAL MINING CO LTD 发明人 MORISHIGE YUKIO;BERUGASEMU HABA;ISHIKAWA KAZUYUKI
分类号 B23K26/00;B23K26/08;B23K26/14;B23K26/38;B23K101/42;H01S3/00;H05K3/00;H05K3/46 主分类号 B23K26/00
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