SOURCE/DRAIN JUNCTION FORMING METHOD

摘要

forming a source/drain junction(7) as shallow as an amorphous silicon(6) deposited by an ion-injection of N+ or P+ impurity after a field oxide film(2), a gate oxide film(3) and a gate electrode(4) are formed on a silicon substrate(1); removing the revealed amorphous silicon(6) except the amorphous silicon(6) on the source/drain junction(7) by using a patterned photoresist(8); depositing a Ti(9) after removing the patterned photoresist(8); and forming the source/drain junction(7) which has low defects and low contact resistance by s high temperature thermal process in the state that the Ti(9) on top of an oxide film(2,5) after forming a Ti silicide(10) by a rapid thermal process.