CONTACT FORMING METHOD

摘要

depositing an insulator(12) on a semiconductor substrate(11) to form several contact holes(13) by patterning the insulator(12) selectively; forming a glue layer(14) on the surface of the several contact holes(13); and forming a metal plug(15a) in the contact holes(13) corresponding to one contact region by an etch-back after forming a metal layer(15) to form a plug on the entire surface in half width of the contact hole(13).