| 摘要 |
<p>A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash-vaporized on a vaporization matrix structure (26) at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The vaporization matrix structure (26) preferably has a high surface-to-volume ratio, and may suitably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO3, BaxSr1-xNb2O6, and PbZr1-xTixO3.</p> |
