| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the generation of the effect of a component C or the like, which is exterted on a sensitive area and is caused by the dielectric constant of sealing resin, and to prevent the generation of the improper operation of a high-speed semiconductor device having the sensitive area, a low-voltage memory or the like. SOLUTION: A surface activator 52 is applied on a sensitive area 41 on a semiconductor chip 40 and thereafter, with this chip 40 die-bonded on a substrate 31, electrodes 42 on the chip 40 are respectively connected with pads 32 on the substrate 31 through wires 51. The upper part of the chip 40 is coated with a liquid thermosetting sealing resin 53 and thereafter, when the chip 40 is subjected to heat treatment, the activator 52 applied on the area 41 is vaporized and at the same time, the liquid sealing resin 53 is cured and the chip 40 is resin-sealed. At this time, a gap part 54 is formed in the bonded region between the surface of the area 41 and the inner surface of the resin 53.</p> |
