| 摘要 |
<p>A distributed-feedback semiconductor laser diode comprises a substrate (12) of n-type conductivity GaAs, a first clad layer (17) of n-type conductivity graded AlGaAs; a first confining layer (20) of undoped AlGaAs; a first quantum well layer (22) of undoped GaAs; a barrier layer (24) of undoped AlGaAs; a second quantum well layer (26) of undoped GaAs; a second confining layer (28) of undoped AlGaAs; a spacer layer (30) of p-type conductivity graded AlGaAs; a plurality of spaced, parallel grating bars (32) of p-type conductivity AlGaAs extending across the spacer layer parallel to the ends of the substrate; a second clad layer (38) of p-type conductivity graded AlGaAs over and between the grating bars; and contact layer (50) of p + type conductivity GaAs.</p> |
