| 摘要 |
PROBLEM TO BE SOLVED: To decrease the leakage current in a semiconductor device including amorphous silicon carbide film and amorphous silicon film formed on an uneven substrate, and decrease the defective density in a thin film. SOLUTION: A P-type amorphous silicon carbide 43 is laminated on an uneven substrate comprised of solid image pick-up element chip 41 and picture element 42 at the film forming rate of 40nm/min by plasma CVD process. Next, an amorphous silicon 44 is laminated on the carbide 43 at the film forming rate of 70nm/min by plasma CVD process and then an amorphous silicon carbide 45 is laminated on the silicon 44 and finally, a transparent electrode 46 is laminated on the carbide 45 to form a laminated solid image pick-up device. |
