PHASE SHIFT MASK AND PHASE SHIFT MASK BLANK

摘要

PROBLEM TO BE SOLVED: To improve etching workability and the edge shape of a pattern in a half-transmitting film comprising a thin film of a material essentially comprising oxygen, molybdenum and silicon and to decrease the inner stress. SOLUTION: The half-transmitting part of a halftone phase shift mask consists of a thin film of a material essentially comprising oxygen, molybdenum(Mo) and silicon(Si). The proportion of molybdenum silicide(MoSi) in the thin film is controlled to <=50at.%, preferably <=25at.%, thereby, increasing the amt. of amorphous Mo-O, Si-O, Si-O-N etc., is increased while preventing production of molybdenum silicide in the whole thin film.