发明名称 FORMATION METHOD OF HIGH DENSITY COLLECTION STRUCTURE WITH HIGH SILICON STRIP
摘要 A (200) face texture with high density by using a chilled high silicon strip is formed by heat treatment of the quenched high Si strip at 1085 to 1125 deg. C in a vacuum of up to 10-4 torr or in a nitrogen atmosphere containing 5 to 20% of hydrogen for at least 1 to 4 hours. Said strip consists, by weight, of 5.3 to 5.7% of Si, 0.8 to 1.2% of Mn, 6.3 to 6.7% of Si+Mn, and the balance being Fe and inevitable impurities.
申请公布号 KR970007163(B1) 申请公布日期 1997.05.03
申请号 KR19940036821 申请日期 1994.12.26
申请人 POSCO;RIST 发明人 SUNG, JIN-KYUNG;KIM, MOON-CHOL
分类号 C21D8/12;(IPC1-7):C21D8/12 主分类号 C21D8/12
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