| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the throughput by applying laser annealing irradiation to non-single crystal silicon thin films of drive circuits for data line and gate line while the latter is irradiated with a laser at an energy density of lower output than the former. SOLUTION: After a polycrystal silicon film is formed, holes are made partly therein through photo-etching 2 and the areas of peripheral drive circuits 1 and 3 are subject to laser annealing. Then, peripheral drive circuits 2 and 4 are irradiated with a laser at an energy density of about 1J/cm<2> that is lower than that for the circuits 1 and 3. That is, the circuits 2 and 4 are used for driving a gate line, and they can be operated at a low frequency as compared with the circuits 1 and 3 for driving a data line, so that they are unnecessary to be irradiated entirely at a constant energy density and the mobility enough to operate the gate line can be obtained. Further, the throughput on two sides of outer circumferential part of a substrate can be improved thanks to low- energy density irradiation.</p> |
