发明名称 GAS TREATMENT PROCESS
摘要 <p>PROBLEM TO BE SOLVED: To effectively remove a volatile inorganic hydrogenated material and effectively refine the hydrogenated material of silicon by bringing gas into contact with a treatment agent composed mainly of bismuth sulfate when the removal, refinement and detection of the gas containing volatile inorganic hydrogenated material are carried out. SOLUTION: When the removal, refinement and detection of gas containing volatile inorganic hydrogenated material handled in a semiconductor manufacturing plant or the like is carried out, gas is brought into contact with a treatment agent composed mainly of bismuth sulfate. In the process of removing gas, the gas containing volatile inorganic hydrogenated material is brought into contact with the treatment agent composed of bismuth sulfate as a main reaction component, and in the process of refinement, the gas composed mainly of a hydrogenated material of silicon is brought into contact with a treatment agent composed of bismuth sulfate as a reaction component. When the detection of the volatile inorganic hydrogenated material or a volatile amine compound or an inorganic metal compound is carried out, the gas is brought into contact with a treatment agent composed of one kind of bismuth sulfate, iron nitrate and the like.</p>
申请公布号 JPH09122437(A) 申请公布日期 1997.05.13
申请号 JP19950288568 申请日期 1995.11.07
申请人 NIPPON SANSO KK 发明人 MORITA AKIHIKO;WATANABE TADAHARU;SUGIMORI YOSHIAKI;YAMADA MAYA
分类号 B01D53/34;B01D53/46;(IPC1-7):B01D53/46 主分类号 B01D53/34
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