| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the flowing of an operating current in a light emitting section from a pedestal electrode by providing the pedestal electrode on a current blocking layer which is formed as the uppermost layer of a laminated structure and constituted of a semiconductor layer of a conductivity opposite to that of a high-resistance layer having a specific resistivity or the semiconductor layer which is the uppermost layer of a light emitting section. SOLUTION: After a lower clad layer 102, a light emitting layer 103, an upper clad layer 104, a p-type contact layer 105 are successively formed on a substrate 101, a high-resistance layer having a resistivity of 10<3>Ω.cm (>=1Ω.cm) is formed on the contact layer 105 and an electrode 107 is formed on a selected area formed by partially etching off the layers 105, 104, 103, and 102. Then an area for arranging a pedestal electrode 110 is formed on the remaining high-resistance layer and a current blocking layer 108 is formed by etching off the other area. Since the layer 108 has a resistivity of 10<3>Ω.cm and forms a p-n junction with the layer 105 immediately below the layer 108, the flowing of an operating current in the light emitting section from the electrode 110 can be prevented.</p> |
