发明名称 Field Effect Transistor Structure Having Notched Mesa
摘要 A Field Effect Transistor structure is provided having: a semi-insulating substrate; a semiconductor mesa structure disposed on the substrate and having a notch in an outer sidewall of the mesa structure; a source electrode disposed within the opposing sidewalls in ohmic contact with a source region of the mesa structure; a drain electrode disposed within the opposing sidewalls in ohmic contact with a drain region of the mesa; and a gate electrode, having an inner portion disposed between, and laterally of, the source electrode and the drain electrode and in Schottky contact with the mesa structure, extending longitudinally towards the notch and having outer portions extending beyond the mesa structure and over portions of the substrate outside of the mesa structure. In one embodiment, the mesa structure includes a pair of notches projecting inwardly towards each other and the inner portion of the gate extends longitudinally between the pair of notches.
申请公布号 US2016329420(A1) 申请公布日期 2016.11.10
申请号 US201514707435 申请日期 2015.05.08
申请人 Raytheon Company 发明人 Hwang Kiuchul
分类号 H01L29/778;H01L29/47;H01L29/423;H01L29/20;H01L29/205 主分类号 H01L29/778
代理机构 代理人
主权项 1. A Field Effect Transistor structure, comprising: a substrate; a semiconductor mesa structure disposed on a portion of a surface of the substrate, the mesa structure having a notch in an outer sidewall of the mesa structure; a source electrode in ohmic contact with a source region of the mesa structure; a drain electrode in ohmic contact with a drain region of the mesa structure; a gate electrode, having an inner portion and an outer portion, the inner portion being disposed over an active region in the mesa and disposed between the source region and the drain region and in Schottky contact with the active region in the mesa structure, the inner portion extending along the direction parallel to the surface of the substrate towards the notch, the outer portion extending beyond the mesa structure and over portions of the substrate outside of the mesa structure; and wherein the notch projects along a direction parallel to the surface of the substrate from the outer sidewall toward, and terminating prior to, the active region in the mesa structure.
地址 Waltham MA US