WORK FUNCTION METAL FILL FOR REPLACEMENT GATE FIN FIELD EFFECT TRANSISTOR PROCESS

摘要

A method of forming a semiconductor device that includes forming a sacrificial gate structure on a channel portion of a fin structure, wherein the angle at the intersection of the sidewall of the sacrificial gate structure and an upper surface of the channel portion of the fin structure is obtuse. Epitaxial source and drain region structures are formed on a source region portion and a drain region portion of the fin structure. At least one dielectric material is formed on the sidewall of the sacrificial gate structure. The sacrificial gate structure may be removed to provide an opening to the channel portion of the fin structure. A function gate structure is formed in the opening. At least one angle defined by the intersection of a sidewall of the functional gate structure and an upper surface of the channel portion of the fin structure is obtuse.

主权项

1. A semiconductor device comprising:
a gate structure present on a channel portion of a fin structure, wherein the gate structure has a sidewall that intersects with the upper surface of the channel portion of the fin structure, wherein an obtuse angle is defined between the sidewall of the gate structure and the upper surface of the channel portion of the fin structure; an epitaxial source region structure on a source region portion of the fin structure; and an epitaxial drain region structure on a drain region portion of the fin structure.