Integrated Avalanche Photodiode Arrays

摘要

A photodetector includes an array of pixels, each pixel comprising a defined doped region defined in a doped semiconductor layer. The defined doped region is defined by selected regions of ion implants to provide resistive isolation between each defined doped region. A capacitor is formed by the defined doped region and a metal layer disposed above the doped semiconductor layer. A contact metal line is disposed above the doped semiconductor layer. The capacitor metal and contact metal lines are electrically coupled together and are in electrical communication with the output of the photodetector array.

主权项

1. A photodetector array comprising:
a substrate layer; a plurality of doped semiconductor layers including a first semiconductor layer doped with a first dopant disposed above said substrate and a second semiconductor layer doped with a second dopant disposed above said first semiconductor layer and proximal thereto; at least said second semiconductor layer being ion implanted in a plurality of selected regions thereof, said ion implants forming defined doped regions between adjacent selected regions; and a metal layer disposed above said second semiconductor layer, said metal layer in electrical communication with an output of said array.