| 发明名称 |
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE |
| 摘要 |
The present invention belongs to the field of display technology and provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a gate, a source, a drain and a plurality of insulating layers, wherein at least one insulating layer comprises a Group VB metal oxide. Since the insulting layer is formed by using the Group VB metal oxide which has high dielectric constant, the thickness of the insulating layer can be reduced and the thin film transistor can be miniaturized. |
| 申请公布号 |
US2016329356(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615085134 |
申请日期 |
2016.03.30 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
CHAN Yucheng;LIU Chienhung |
| 分类号 |
H01L27/12;H01L29/66;H01L29/786;H01L29/423 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor, comprising a gate, a source, a drain and a plurality of insulating layers, wherein at least one insulating layer comprises a Group VB metal oxide. |
| 地址 |
Beijing CN |
