SEMICONDUCTOR MEMORY DEVICE

摘要

Provided is a semiconductor memory device including a floating gate formed of a semiconductor, which includes a first floating gate and a second floating gate being of conductivity types with different polarities. Injection of electrons into the first floating gate via a tunnel insulating film is stored through decrease in holes in a valence band of the second floating gate, and ejection of electrons from the first floating gate via the tunnel insulating film is stored through increase in holes in the valence band of the second floating gate.

主权项

1. A semiconductor memory device, comprising:
a tunnel insulating film; and a floating gate having a first floating gate in contact with the tunnel insulating film and a second floating gate in contact with the first floating gate, wherein injection of electrons into the first floating gate via the tunnel insulating film is stored through decrease in holes in a valence band of the second floating gate, and wherein ejection of electrons from the first floating gate via the tunnel insulating film is stored through increase in holes in the valence band of the second floating gate.