INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

An integrated circuits structure includes a semiconductor substrate, at least an non-planar field effect transistor (FET) device formed on the semiconductor substrate, and an interconnection structure formed on the semiconductor substrate. The non-planar FET device includes a plurality of fins and a gate electrode. The interconnection structure includes a plurality of first group metals and a plurality of second group metals. The first group metals are formed on the non-planar FET and the second group metals are formed on the first group metals. The first group metals include a first metal pitch and the second group metals include a second metal pitch. The second metal pitch is 1.2-1.5 times to the first metal pitch.

主权项

1. An integrated circuit (IC) structure comprising:
a semiconductor substrate; at least a non-planar field effect transistor (FET) device formed on the semiconductor substrate, the non-planar FET device comprising a plurality of fins and a gate electrode, and the fins comprising a fin pitch; an interconnection structure formed on the semiconductor substrate, the interconnection structure comprising a plurality of first group metals and a plurality of second group metals, the first group metals being formed on the non-planar FET device and the second group metals being formed on the first group metals, the first group metals comprising a first metal pitch, the second group metals comprising a second metal pitch, and the second metal pitch being 1.2-1.5 times the first metal pitch; and a plurality of contact plugs formed on the non-planar FET device, the contact plugs comprising a contact pitch, and the contact pitch being larger than the fin pitch.