| 摘要 |
<p>PROBLEM TO BE SOLVED: To immobilize Mg as acceptor impurities, by including a junction formation process of forming pn junction including the crystal layer of a groupαIII nitride semiconductor by adding group II elements, a process of forming an electrode on the crystal layer, and a field application and heating process of heating the pn junction into the specified temperature range, and forming an electric field which crosses the pn junction through the electrode. SOLUTION: An AlN buffer layer 2, on a substrate 1, and an Si-doped n-type GaN layer 3, thereon, are made. Organic Mg gas is introduced within a growth furnace to form an Mg-doped GaN layer 4 and form pn junction. Hereon, an SiO2 protective film 6 is made, and it is partially removed, and an electrode hole is made, and Ti and Al are stacked to form an electrode 5A. Pd is deposited to the section where the layer 4 is exposed, and an electrode 5B, and thereon, after heating, an Al are stacked to form an electrode 5C. Within the Mg-doped GaN layer 4, hydrogen originated from NH3 used as group III material meets Mg, and forms a kind of complex of Mg-H, whereby it can be immobilized as an acceptor impurity.</p> |
