| 摘要 |
PROBLEM TO BE SOLVED: To realize a highly reliable method for evaluating a semiconductor substrate. SOLUTION: A wafer 110 to be evaluated is mounted on a stage 101 and the position and angle of wafer 110 are adjusted at a control processing section 108. The wafer 110 on the stage 101 is then irradiated sequentially or simultaneously with X-rays, argon laser light and YAG laser light from a light source section 102 and the reflected light or fluorescence is detected by means of a condenser 104 or a light receiving unit 105 in order to perform fluorescent X-ray analysis, locking curve measurement, PL inspection and detect inspection of the wafer 110. Respective characteristics measured through the inspection process are compared with the final pass/fail decision results for a semiconductor laser made of a wafer 110 passed through the inspection process and the evaluation criterion of wafer 10 is determined or corrected. |
