THIN FILM TRANSISTOR, AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To obtain a thin film transistor where a ratio Ion /Ioff is comparatively high and hydrogen is restrained from migrating after hydrogenation. SOLUTION: A silicon dioxide layer 15 and a silicon nitride layer 16 are successively deposited on a gate electrode 13, then a polysilicon layer 18 is deposited thereon and etched for the formation of a transistor 21. The transistor 21 is hydrogenated to regulate a threshold voltage after source/drain regions are formed by ion implantation and coated with an upper sealing layer of silicon nitride.