FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

forming a first residual layer on a scribe line of a semiconductor substrate; forming an alignment mark of negative polarity by patterning the first residual layer; forming a second residual layer having etching-selectivity to the first residual layer on the whole surface of the structure; and forming an alignment mark of positive polarity by patterning the second residual layer on the first residual layer between the alignment marks of negative polarity.