COLUMN REDUNDANCY CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

Redundant column decoder makes normal column disable, and redundancy column enable by regular address signal. Redundant column control pulse generating circuit controls redundant column selection with the output signal of redundant column decoder lead. Array block selecting control means generates regular array block selecting signal correspond to the output signal of redundant control pulse generating circuit and redundant column decoder. At this time, redundant column decoder lead makes the neighboring redundant column of memory cell array block enable in defect aiding.