| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a p-type gallium nitride-based compound with high crystal quality and low resistance without using an additional step in a vapor growth method suitable for mass product, by cooling a substrate crystal at a given temperature in atmosphere of carrier gas excluding hydrogen just after the crystal is grown in the vapor growth step. SOLUTION: A crystal substrate including p-type gallium nitride has a temperature of 1030 deg.C at a crystal growth step. When the crystal substrate is cooled after crystal growth, the vapor phase atmosphere is made of hydrogen carrier gas and ammonia at a temperature of 700 deg.C or above, and at the temperature of 700 deg.C the gas is changed to only nitrogen gas. The crystal surface is subjected to heat deterioration when the substrate is cooled at 700 deg.C or below, and after the crystal is cooled, the gallium nitride-based compound semiconductor layer is etched and removed. Since the atmosphere includes only nitrogen when the substrate crystal is cooled at 700 deg.C or below, hydrogen gas is prevented from diffusing out of the crystal surface. After the cooling of the crystal, a desired structure is obtained only by etching the deteriorated crystal surface.</p> |
