| 摘要 |
PURPOSE:To improve insulation of die from die by forming a protrusion of an epitaxially grown layer on the surface of the die, laminating it to form a gap between the die and the part not connected to the die, and burying the gap with sealing glass. CONSTITUTION:A plurality of semiconductor dies 12 are laminated, the laminated dies 12 are held by heat sinks 11 from both sides, and hermetically sealed with sealing glass 13 by fusion-adhering. A p-type diffused layer 22 is formed on a semiconductor substrate (N-type) 21 by the dies 12, and the same conductivity type epitaxial layer 24 is formed on the layer 22. Electrodes 25 and 26 are formed on both rear and front faces of the die 12. Thus, the insulation of the die from the die can be obtained. |
