| 摘要 |
A method and apparatus are disclosed for coating uniformly thick photoresist upon the surface of a semiconductor having an uneven topography. The uniform thickness of photoresist on a wafer provided with a variety of patterns can be achieved by use of the apparatus of the present invention. In this regard, a wafer of which the upper surface is primarily coated with photoresist is mounted in the wafer cassette 6 so that the upper surface faces downward and the heater 7 raises the temperature of the chamber 4 to an extent that the primarily coated photoresist may flow while the pressure is kept twice or three times larger than atmosphere by the pressure control terminal 5 under a gaseous atmosphere. Under the influence of gravity, the photoresist is distributed and flows from the surface of the wafer to the patterns since the wafer is upset. The resultant photoresist has a surface which is reshaped along with the topology thereunder and thus, has almost uniform thickness everywhere. With this improved coating uniformity of photoresist, there can be brought about a high yield, fine patterns useful for high integrated circuits, and prevention of bulk effect. |
