| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a liquid crystal display device capable of suppressing the degradation in display quality occurring in consequence of the contents of the components contained in three layers; SiN film, i-type amorphous Si film and N<+> amorphous Si film; constituting the thin-film transistors of a liquid crystal display element by detecting and controlling the contents of the components of these components and a method for inspecting the characteristics of the thin films. SOLUTION: The three-layer films consisting of the SiN film GI formed on the conductive film on a transparent glass substrate SUB1, the i-type amorphous Si film As formed thereon and the N<+> type amorphous Si film do formed thereon are irradiated with an Ar laser beam of laser output 1 to 100mW. The peak intensity ratios (B/A), (B/C) and (C/A) are controlled to remain within a plurality of range for each of SD2 , N2 O, CO2 , O2 , NO, CO, N2 , CH4 , H2 S, NH3 and H2 when the peak intensity of the plasma ray of the Ar laser detected in a wave number region 150 to 160cm<-1> is defined as (A), the peak intensity of the Raman scattered light detected in the specific wave number region of various kinds of inorg. gaseous components in the thin films described above as (B) and the peak intensity of the Raman scattered light detected in the wave number region 450 to 490cm<-1> of the amorphous Si as (C).</p> |
