| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the production processes and to improve numerical aperture by forming a transparent pixel electrode in a transparent picture element elec trode forming area on an insulating film. SOLUTION: A gate signal conductor and a light shielding film SKD consisting of the same material as the gate signal conductor are simultaneously formed on the surface of a transparent substrate SUB1. Next, all the surface area of the substrate SUB1 is covered with the gate signal conductor and the light shielding film SKD to form the insulating film (gate insulating film GI). Then, a semiconductor layers AS and a laminated body consisting of d0 and other layers are formed in a thin film transistor forming area and a drain signal line forming area except the transparent pixel electrode ITO1 forming area on the insulating film by performing a photo process once. The transparent pixel electrode ITO1 is formed in the electrode ITO1 forming area on the insulating film. Thus, the insulating film is formed on all the area of the substrate SUB1 but the photo process need not be used in the case of forming the insulating film, so that the increase of the production process is prevented.</p> |
