Insulated gate bipolar transistor with reduced losses,申请号AU19970032205-传众专利搜索

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发明名称	Insulated gate bipolar transistor with reduced losses
摘要
申请公布号	AU3220597(A)	申请公布日期	1998.01.05
申请号	AU19970032205	申请日期	1997.05.29
申请人	THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS	发明人	KRISHNA SHENAI
分类号	H01L29/08;H01L29/739	主分类号	H01L29/08
代理机构		代理人
主权项
地址

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